Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing
نویسندگان
چکیده
implantation and thermal annealing Yu Yang, Jiming Bao, Chong Wang, and Michael J. Aziz Institute of optoelectronic information materials, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091, China Department of Electrical and Computer Engineering, University of Houston, 4800 Calhoun Road, Houston, Texas 77204, USA Institute of Engineering and Technology, Yunnan University, 2 Northern Cuihu Road, Kunming, Yunnan Province 650091, China School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USA
منابع مشابه
Point defect engineered Si sub-bandgap light-emitting diode.
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line ...
متن کاملThermal annealing effects on photoluminescence properties of carbon-doped silicon- rich oxide thin films implanted with erbium
Results are presented from the photoluminescence properties of C-doped Si-rich thin film oxides implanted with Er, as investigated for various postdeposition implantation and subsequent annealing and passivation conditions. In particular, it was found that the near-infrared Er luminescence intensity can be increased by up to a factor of $4 after a postdeposition anneal at temperatures of 300–11...
متن کاملDeep photoluminescence in S&i 1 -,Ge,/Si quantum wells created by ion implantation and annealing
Strong broad photoluminescence similar to that observed in some materials grown by molecular beam epitaxy (MBE) has been observed in Si/Si, -,Ge,/Si quantum wells grown by chemical vapor deposition. As grown, the samples exhibited SiGe band-edge phonon-resolved bound-exciton luminescence, but after being self-implanted with silicon and annealed at 600 “C, a deep broad luminescence band 80-100 m...
متن کاملCompositional Changes in Erbium-Implanted GaN Films Due To Annealing
We have conducted a study of the material and infrared-luminescence properties of Er-implanted GaN thin films as a function of annealing. The GaN films, grown by metal-organic chemical-vapor deposition, were coimplanted with Er and O ions. After implantation, the films were furnace annealed at temperatures up to 1,100°C. Following each annealing stage, the samples were examined by photoluminesc...
متن کاملAnnealing behavior of luminescence from erbium-implanted GaN films
We have conducted a systematic study of the bandedge and infrared luminescence properties of Er-implanted GaN thin films. The GaN films, grown by metalorganic chemical vapor deposition, were co-implanted with Er and O ions. After implantation, the implanted samples were furnace annealed at temperatures up to 1100°C. Following annealing, the samples were examined for both bandedge luminescence a...
متن کامل